Julian Buchel, Athanasios Vasilopoulos, et al.
IEEE JESTCS
The impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high- k gate dielectrics and metal gate was investigated by monitoring flatband voltage (VFB) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive VFB shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [Vo ++] generation in high- k dielectrics due to the shorter thermal budget. Processing parameters including high- k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different VFB behaviors. © 2011 American Institute of Physics.
Julian Buchel, Athanasios Vasilopoulos, et al.
IEEE JESTCS
Takashi Ando, Martin M. Frank, et al.
ECS Transactions
Huiling Shang, Sameer Jain, et al.
VLSI Technology 2012
Martin D. McDaniel, Agham Posadas, et al.
Journal of Applied Physics