Electrical properties of DX centers in GaAs and AlGaAs
- P.M. Mooney
- 1989
- Radiation Effects and Defects in Solids
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119 results for P.M. Mooney
Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs
- P.M. Mooney
- W. Wilkening
- et al.
- 1989
- Physical Review B
Noise spectroscopy of deep level (DX) centers in GaAs-AlxGa 1-xAs heterostructures
- J.R. Kirtley
- T.N. Theis
- et al.
- 1988
- Journal of Applied Physics
Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Applied Physics
Deep electron traps in GaAs/n-AlxGa1-xAs single-quantum wells
- D.J. As
- P.W. Epperlein
- et al.
- 1988
- Journal of Applied Physics
Evidence for large lattice relaxation at the DX center in Si-doped AlxGa1-xAs
- P.M. Mooney
- G. Northrop
- et al.
- 1988
- Physical Review B
Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density
- T.N. Theis
- P.M. Mooney
- et al.
- 1988
- Physical Review Letters
Deep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1-xAs of low Al content
- P.M. Mooney
- T.N. Theis
- et al.
- 1988
- Applied Physics Letters
DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- M.I. Nathan
- S. Tiwari
- et al.
- 1987
- Journal of Applied Physics