Deep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
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119 results for P.M. Mooney
DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- M.I. Nathan
- S. Tiwari
- et al.
- 1987
- Journal of Applied Physics
Photoionization cross section of the DX center in Si-doped AlxGa1-xAs
- R. Legros
- P.M. Mooney
- et al.
- 1987
- Physical Review B
Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Journal of Applied Physics
Barrier heights and electrical properties of intimate metal-AlGaAs junctions
- M. Eizenberg
- M. Heiblum
- et al.
- 1987
- Journal of Applied Physics
The capture barrier of the DX center in Si-doped AlxGa 1-xAs
- P.M. Mooney
- N. Caswell
- et al.
- 1987
- Journal of Applied Physics
Origin of the nonexponential thermal emission kinetics of DX centers in GaAlAs
- E. Calleja
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Trapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature
- M.I. Nathan
- P.M. Mooney
- et al.
- 1986
- Surface Science
The characterization of indium desorbed Si surfaces for low temperature surface cleaning in Si molecular beam epitaxy
- H.T. Yang
- P.M. Mooney
- 1985
- Journal of Applied Physics