LeGoues, Mooney, and Tersoff reply [2]
- F.K. LeGoues
- P.M. Mooney
- et al.
- 1994
- Physical Review Letters
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119 results for P.M. Mooney
Spatially resolved Raman spectroscopy of a step graded Ge xSi1-x strain relief structure
- J.C. Tsang
- F.H. Dacol
- et al.
- 1993
- Applied Physics Letters
Strain relaxation and mosaic structure in relaxed SiGe layers
- P.M. Mooney
- F. Legoues
- et al.
- 1993
- Applied Physics Letters
Crystallographic tilting resulting from nucleation limited relaxation
- F. Legoues
- P.M. Mooney
- et al.
- 1993
- Applied Physics Letters
Raman scattering analysis of relaxed GexSi1-x alloy layers
- P.M. Mooney
- F.H. Dacol
- et al.
- 1993
- Applied Physics Letters
Nucleation of dislocations in SiGe layers
- P.M. Mooney
- F. Legoues
- et al.
- 1993
- MRS Fall Meeting 1993
Measurement of the activation barrier to nucleation of dislocations in thin films
- F.K. LeGoues
- P.M. Mooney
- et al.
- 1993
- Physical Review Letters
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- M.A. Tischler
- P.M. Mooney
- et al.
- 1992
- Journal of Applied Physics
DX centers in Sn-doped AlxGa1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- P.M. Mooney
- B.D. Parker
- et al.
- 1992
- Applied Physics Letters
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters