Interface studies of tungsten gate metal-oxide-silicon capacitors
- Huiling Shang
- Marvin H. White
- et al.
- 2001
- Applied Physics Letters
Publications
94 results for Fenton R. McFeely
Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
- L.J. Huang
- K.K. Chan
- et al.
- 2000
- IEEE International SOI Conference 2000
Nucleation of chemical vapor deposited silicon nitride on silicon dioxide
- M. Copel
- P.R. Varekamp
- et al.
- 1999
- Applied Physics Letters
CMOS and memories: From 100 nm to 10 nm!
- Sandip Tiwari
- Paul M. Solomon
- et al.
- 1999
- Microelectronic Engineering
The role of second-neighbor effects in photoemission: Are silicon surfaces and interfaces special?
- K.Z. Zhang
- K.E. Litz
- et al.
- 1998
- Applied Physics Letters
Fabrication of midgap metal gates compatible with ultrathin dielectrics
- D.A. Buchanan
- F.R. McFeely
- et al.
- 1998
- Applied Physics Letters
An infrared study of H8Si8O12 cluster adsorption on Si(100) surfaces
- Joseph Eng Jr.
- Krishnan Raghavachari
- et al.
- 1998
- Journal of Chemical Physics
Extra-atomic relaxation and core-level binding energy shifts at silicon/silicon oxide interfaces: Effects of cluster size on physical models
- K.Z. Zhang
- M.M. Banaszak Holl
- et al.
- 1998
- Journal of Physical Chemistry B
The role of extra-atomic relaxation in determining Si 2p binding energy shifts at silicon/silicon oxide interfaces
- K.Z. Zhang
- J.N. Greeley
- et al.
- 1997
- Journal of Applied Physics
A new model silicon/silicon oxide interface synthesized from H10Si10O15 and Si(100)-2×1
- K.Z. Zhang
- Leah M. Meeuwenberg
- et al.
- 1997
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers