High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
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86 results for Takashi Ando
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning
- Minhaz Abedin
- Nanbo Gong
- et al.
- 2023
- Scientific Reports
Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy
- Franco Stellari
- Ernest Y. Wu
- et al.
- 2021
- IEEE Electron Device Letters
Signal and noise extraction from analog memory elements for neuromorphic computing
- Nanbo Gong
- T. Idé
- et al.
- 2018
- Nature Communications
Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning
- Youngseok Kim
- Soon-Cheon Seo
- et al.
- 2021
- IEEE Electron Device Letters