Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- Ruqiang Bao
- Richard G. Southwick
- et al.
- 2018
- VLSI Technology 2018
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88 results for Takashi Ando
Advanced replacement high-K/metal gate stack engineering for high-performance strained silicon-germanium FinFETs with high Ge content
- Pouya Hashemi
- Takashi Ando
- et al.
- 2018
- AiMES - ECS - SMEQ 2018
Signal and noise extraction from analog memory elements for neuromorphic computing
- Nanbo Gong
- T. Idé
- et al.
- 2018
- Nature Communications
PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation
- Eduard Cartier
- Martin M. Frank
- et al.
- 2018
- IRPS 2018
Advanced FDSOI design: The U-channel device for 7nm node and beyond
- Ramachandran Muralidhar
- Robert Dennard
- et al.
- 2017
- S3S 2017
Advanced FDSOI Device Design: The U-Channel Device for 7 nm Node and beyond
- Ramachandran Muralidhar
- Robert Dennard
- et al.
- 2018
- IEEE J-EDS
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- IEDM 2017
Electron mobility in thin In0.53Ga0.47As channel
- Eduard Cartier
- Amlan Majumdar
- et al.
- 2017
- ESSDERC 2017