Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
- S. Kim
- John A. Ott
- et al.
- 2019
- IEDM 2019
Publications
93 results for Takashi Ando
Gate-Cut-Last in RMG to Enable Gate Extension Scaling and Parasitic Capacitance Reduction
- A. Greene
- Huimei Zhou
- et al.
- 2019
- VLSI Technology 2019
Reliability Challenges with Materials for Analog Computing
- Eduard Cartier
- Wanki Kim
- et al.
- 2019
- IRPS 2019
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- Ruqiang Bao
- Richard G. Southwick
- et al.
- 2018
- VLSI Technology 2018
Advanced replacement high-K/metal gate stack engineering for high-performance strained silicon-germanium FinFETs with high Ge content
- Pouya Hashemi
- Takashi Ando
- et al.
- 2018
- AiMES - ECS - SMEQ 2018
Signal and noise extraction from analog memory elements for neuromorphic computing
- Nanbo Gong
- T. Idé
- et al.
- 2018
- Nature Communications
PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation
- Eduard Cartier
- Martin M. Frank
- et al.
- 2018
- IRPS 2018
Advanced FDSOI design: The U-channel device for 7nm node and beyond
- Ramachandran Muralidhar
- Robert Dennard
- et al.
- 2017
- S3S 2017