Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
- et al.
- 2016
- VLSI Technology 2016
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88 results for Takashi Ando
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Circuits 2015
High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Technology 2015
Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks
- Adra Carr
- John Rozen
- et al.
- 2015
- Applied Physics Letters
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond
- Takashi Ando
- B. Kannan
- et al.
- 2014
- VLSI Technology 2014
Combined ramp voltage stress and constant voltage stress for optimal BTI voltage acceleration and lifetime modeling
- Barry P. Linder
- Takashi Ando
- 2014
- IRPS 2014
Gate stacks for silicon, silicon germanium, and III-V channel MOSFETs
- Martin M. Frank
- Yu Zhu
- et al.
- 2014
- ECS Meeting 2014