Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
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11 results for F. Pagette
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
- N. Tega
- H. Miki
- et al.
- 2009
- VLSI Technology 2009
Contact resistivity of NiPtSi on n-doped silicon activated by laser annealing
- Francois Pagette
- Paul M. Solomon
- et al.
- 2008
- MRS Proceedings 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Present status and future directions of SiGe HBT technology
- Marwan H. Khater
- Thomas N. Adam
- et al.
- 2006
- LEC 2006
Pushing the performance limits of SiGe HBT technology
- Marwan Khater
- Thomas Adam
- et al.
- 2006
- ECS Meeting 2006