Conference paper
Silicon-on-insulator MOSFETs with hybrid crystal orientations
M. Yang, K.K. Chan, et al.
VLSI Technology 2006
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
M. Yang, K.K. Chan, et al.
VLSI Technology 2006
Hulling Shang, Kam-Leung Lee, et al.
IEEE Electron Device Letters
Zhen Zhang, Bin Yang, et al.
Applied Physics Letters
Xi Chen, Si Chen, et al.
IEEE T-ED