X.J. Zhou, D.M. Fleetwood, et al.
IEEE TNS
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
X.J. Zhou, D.M. Fleetwood, et al.
IEEE TNS
H. Okorn-Schmidt, C. D'Emic, et al.
Diffusion and Defect Data Pt.B: Solid State Phenomena
P.D. Kirsch, D.-G. Park, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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VLSI Circuits 2011