SOI for a 1-Volt CMOS Technology and Application to a 512kb SRAM with 3.5 ns Access Time
- G. Shahidi
- T.H. Ning
- et al.
- 1993
- IEDM 1993
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50 results for B. Davari
SOI technology outlook for sub-0.25 μm CMOS, challenges and opportunities
- B. Davari
- H.J. Hovel
- et al.
- 1993
- IEEE International SOI Conference 1993
SOI technology outlook for Sub-0.25 μm CMOS, challenges and opportunities
- Bijan Davari
- Ghavam G. Shahidi
- 1993
- ESSDERC 1993
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
Saturation transconductance of deep-submicron-channel MOSFETs
- Y. Taur
- C.-H. Hsu
- et al.
- 1993
- Solid State Electronics
Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs
- Alexandre Acovic
- Devendra K. Sadana
- et al.
- 1993
- IEEE Electron Device Letters
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992