Saturation transconductance of deep-submicron-channel MOSFETs
- Y. Taur
- C.-H. Hsu
- et al.
- 1993
- Solid State Electronics
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50 results for B. Davari
Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS. Invited review paper
- Bijan Davari
- 1992
- Microelectronic Engineering
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
Boron redistribution in arsenic-implanted silicon and short-channel effects in metal-oxide-semiconductor field effect transistors
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- Applied Physics Letters
A High-Performance 0.25-μm CMOS Technology: I—Design and Characterization
- Wen-Hsing Chang
- Bijan Davari
- et al.
- 1992
- IEEE T-ED
Voltage dependence of the MOSFET gate-to-source/drain overlap
- C.S. Oh
- W.H. Chang
- et al.
- 1990
- Solid State Electronics
Shallow p+ junction formation by a reverse-type dopant preamorphization scheme
- E. Ganin
- B. Davari
- et al.
- 1989
- Applied Physics Letters
Gate materials consideration for submicron CMOS
- C.-Y. Ting
- B. Davari
- 1989
- Applied Surface Science
Source-Drain Contact Resistance in CMOS with Self-Aligned TiSi2
- Yuan Taur
- Jack Yuan-Chen Sun
- et al.
- 1987
- IEEE T-ED
Transient Behavior of Transverse Acousto electric Voltage and Nondestructive Characterization of Semiconductor Surfaces
- B. Davari
- Pankaj K. Das
- 1985
- IEEE Transactions on Sonics and Ultrasonics