Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
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71 results for T.O. Sedgwick
Transient enhanced diffusion in arsenic-implanted short time annealed silicon
- R. Kalish
- T.O. Sedgwick
- et al.
- 1984
- Applied Physics Letters
Investigation of the silicon beading phenomena during zone-melting recrystallization
- Z.A. Weinberg
- V.R. Deline
- et al.
- 1983
- Applied Physics Letters
Pyrometric measurement of temperature during cw argon-ion laser annealing and the solid-state regrowth rate of amorphous Si
- T.O. Sedgwick
- 1981
- Applied Physics Letters
Dependence of electrical characteristics on laser power in cw laser processed Al-nSi diodes
- C.M. Wu
- E.S. Yang
- et al.
- 1981
- Journal of Applied Physics
Magnetic properties of laser annealed garnet films as determined by FMR and bubbles statics
- G. Suran
- J.C. DeLuca
- et al.
- 1980
- IEEE Transactions on Magnetics
Low temperature CVD garnet growth
- M.E. Cowher
- T.O. Sedgwick
- 1979
- Journal of Crystal Growth
Inelastic light scattering studies of chemical vapor deposition systems
- J.E. Smith Jr.
- T.O. Sedgwick
- 1977
- Thin Solid Films
Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systems
- T.O. Sedgwick
- J.E. Smith Jr.
- et al.
- 1975
- Journal of Crystal Growth
Measurement of gas temperature gradients using Raman scattering spectroscopy
- J.E. Smith Jr.
- T.O. Sedgwick
- 1975
- Letters in Heat and Mass Transfer