Anomalous transient diffusion of ion implanted dopants: A phenomenological model
- Alwin E. Michel
- 1989
- Nuclear Inst. and Methods in Physics Research, B
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35 results for Alwin E. Michel
Transient boron diffusion in ion-implanted crystalline and amorphous silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1988
- Journal of Applied Physics
Diffusion of Sb, Ga, Ge, and (As) in TiSi2
- P. Gas
- G. Scilla
- et al.
- 1988
- Journal of Applied Physics
Formation and Analysis of Shallow Arsenic Profiles
- S. Clayton
- B. Offord
- et al.
- 1988
- Electronics Letters
Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Anomalous diffusion of boron implanted into silicon along the [100] direction
- Alwin E. Michel
- M. Numan
- et al.
- 1988
- Applied Physics Letters
The diffusion of elements implanted in films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Applied Physics
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
Implantation damage and the anomalous transient diffusion of ion-implanted boron
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
Rapid annealing for shallow junction formation
- Alwin E. Michel
- 1987
- ESSDERC 1987