Annealing properties of ion-implanted p-n junctions in silicon
- Alwin E. Michel
- F. Fang
- et al.
- 2003
- Journal of Applied Physics
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35 results for Alwin E. Michel
Anomalous transient diffusion of ion implanted dopants: A phenomenological model
- Alwin E. Michel
- 1989
- Nuclear Inst. and Methods in Physics Research, B
Transient diffusion of boron implanted in SI along random and channeling directions
- W.K. Chu
- M. Numan
- et al.
- 1989
- Nuclear Inst. and Methods in Physics Research, B
Transient boron diffusion in ion-implanted crystalline and amorphous silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1988
- Journal of Applied Physics
Diffusion of Sb, Ga, Ge, and (As) in TiSi2
- P. Gas
- G. Scilla
- et al.
- 1988
- Journal of Applied Physics
The diffusion of elements implanted in films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Applied Physics
Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Formation and Analysis of Shallow Arsenic Profiles
- S. Clayton
- B. Offord
- et al.
- 1988
- Electronics Letters
Anomalous diffusion of boron implanted into silicon along the [100] direction
- Alwin E. Michel
- M. Numan
- et al.
- 1988
- Applied Physics Letters
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters