Studies by cross-sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
- Chin-An Chang
- C.M. Serrano
- et al.
- 2008
- Applied Physics Letters
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152 results for L. Esaki
Ion backscattering and channeling study of InAs-GaSb superlattices
- F.W. Saris
- W.K. Chu
- et al.
- 2008
- Applied Physics Letters
Superfine Structures of Semiconductors Grown by Molecular-Beam Epitaxy
- L. Esaki
- L.L. Chang
- 2006
- C R C Critical Reviews in Solid State Sciences
The field-effect interface conductance in Ge - GaAs n-n Heterojunctions
- L. Esaki
- W.E. Howard
- et al.
- 2004
- Applied Physics Letters
Electron tunneling between a metal and a semiconductor: Characteristics of Al-Al2O3-SnTe and -GeTe junctions
- L.L. Chang
- P.J. Stiles
- et al.
- 2004
- Journal of Applied Physics
Magnetic field effects on InSb tunnel diodes
- L. Esaki
- R.R. Haering
- 2004
- Journal of Applied Physics
Direct determination of the scattering time in bismuth and antimony-bismuth crystals at low temperatures
- Leo Esaki
- John Heer
- 2004
- Journal of Applied Physics
GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier
- L.L. Chang
- L. Esaki
- et al.
- 2003
- Journal of Applied Physics
Vacancy association of defects in annealed GaAs
- L.L. Chang
- L. Esaki
- et al.
- 2003
- Applied Physics Letters
Nonlinear optical response of conduction electrons in a superlattice
- R. Tsu
- L. Esaki
- 2003
- Applied Physics Letters