Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond
- R.F. Schnabel
- L. Clevenger
- et al.
- 2000
- Microelectronic Engineering
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84 results for Lawrence Clevenger
Cleans for Al vias in a 0.175 μm Dual Damascene Process
- J.P. Gambino
- L. Clevenger
- et al.
- 1999
- IITC 1999
Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines
- J.L. Hurd
- K.P. Rodbell
- et al.
- 1998
- Applied Physics Letters
Interdiffusion and phase formation in Cu(Sn) alloy films
- L. Clevenger
- B. Arcot
- et al.
- 1998
- Journal of Applied Physics
Low temperature formation of C54-TiSi2 using titanium alloys
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Applied Physics Letters
Surface roughening during titanium silicide formation: A comparison between Si(100) and poly-Si substrates
- C. Lavoie
- R. Martel
- et al.
- 1996
- MRS Fall Meeting 1996
Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Journal of Materials Research
Crystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry
- V. Svilan
- K.P. Rodbell
- et al.
- 1997
- Journal of Electronic Materials
Phase formation sequences in the silicon-phosphorus system: Determined by in-situ synchrotron and conventional X-ray diffraction measurements and predicted by a theoretical model
- J.R.A. Carlsson
- L. Clevenger
- et al.
- 1997
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
In-situ X-ray diffraction analysis of TiSi2 phase formation from a titanium-molybdenum bilayer
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1996
- MRS Fall Meeting 1996