Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond
Abstract
This paper presents an overview of issues associated with Al dual damascene process technology. Different integration schemes are discussed and characteristics of metal fill, planarization and reliability are highlighted. Finally, a comparison is made between Al dual damascene, Al RIE, and Cu dual damascene.
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