Low surface recombination velocity and contact resistance using p +/p carbon-doped GaAs structures
- T.J. De Lyon
- J.A. Kash
- et al.
- 1990
- Applied Physics Letters
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177 results for J. Woodall
Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1990
- Applied Physics Letters
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure
- J. Freeouf
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
Structure and chemical composition of water-grown oxides of GaAs
- Z. Liliental-Weber
- C.W. Wilmsen
- et al.
- 1990
- Journal of Applied Physics
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- Alan C. Warren
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Epi-GaAs surface treatment - impact of mixed phases on device performance
- Alan C. Warren
- J. Woodall
- 1989
- ECS Meeting 1989
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy
- S. Chang
- I.M. Vitomirov
- et al.
- 1990
- Physical Review B
Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces
- S. Chang
- L.J. Brillson
- et al.
- 1990
- Physical Review Letters