Conference paper

Scaled-footprint ultra-low power cryogenic InGaAs/InP HEMTs with record-high combination of low-noise and high-frequency performance

Abstract

In this work we demonstrate cryogenic InxGa1xAs/InPIn_x Ga_{1-x} As / InP HEMTs with highly scaled gate footprints, down to 380×40nm2380\times40 nm^2 for a single gate finger, and investigate the impact of footprint scaling on device performance. The 80%80\% In channel devices show fT=622 GHzf_T = 622\ GHz and fMAX=733 GHzf_{MAX} = 733\ GHz together with a noise indication factor (I_D)/gm=0.17(V×mm/S)√(I\_D)/gm = 0.17 √(V\times mm/S) at 4 K4\ K, which is a record-high combination of high-frequency and low-noise performance. The performance is enabled by heterostructure engineering, resulting in ultra-low RON=250 Ω×µmR_{ON} = 250\ Ω \times µm together with a minimum subthreshold swing SS<10mV/decadeSS < 10 mV/decade. These results show that cryogenic III-V HEMT technology can provide excellent performance at scaled footprints for readout in future high-density quantum systems.

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