I.3 The Effect of Doping on the Degradation of GaAs-AlxGa1−xAs Injection LasersP.G. McMullinJ.M. Blumet al.1974IEEE JQE
Discrete and planar monolithic structures of III-IV compounds and alloysJ.M. BlumK.K. Shih1973Journal of Luminescence
GaAs1-xPx Electroluminescent Diodes Made by Zn Diffusion in an Open-Tube SystemK.K. ShihJ.M. Blum1972JES
Contact resistances of AuGeNi, AuZn and Al to III-V compoundsK.K. ShihJ.M. Blum1972Solid-State Electronics
Effect of Partial Dissolution During LPE Growth of AlxGa1-xAs on the Efficiency of Diffused Light-Emitting DiodesK.K. ShihJ.M. Blum1971JES
The liquid phase epitaxy of alxga1-xasfor monolithic planar structuresJoseph M. BlumKwang K. Shih1971Proceedings of the IEEE