1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
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38 results for W.D. Grobman
1 µm MOSFET VLSI Technology: Part VI― Electron-Beam Lithography
- Warren D. Grobman
- Hans E. Luhn
- et al.
- 1979
- IEEE JSSC
Absolute conduction- and valence-band positions for Ge from an anisotropic model of photoemission
- W.D. Grobman
- D.E. Eastman
- 1974
- Physical Review Letters
Spectroscopically observed valence mixing in SmS and related compounds
- J. Freeouf
- D.E. Eastman
- et al.
- 1974
- Physical Review Letters
Valence electronic structure and charge transfer in tetrathiofulvalinium tetracyanoquinodimethane (TTF-TCNQ) from photoemission spectroscopy
- W.D. Grobman
- R.A. Pollak
- et al.
- 1974
- Physical Review Letters
Photoemission observations of resonant d levels and d-band formation for very thin overlayers of Cu and Pd on Ag
- D.E. Eastman
- W.D. Grobman
- 1973
- Physical Review Letters
Photoemission valence-band densities of states for Si, Ge, and GaAs using synchrotron radiation
- W.D. Grobman
- D.E. Eastman
- 1972
- Physical Review Letters
Photoemission densities of intrinsic surface states for si, Ge, and GaAs
- D.E. Eastman
- W.D. Grobman
- 1972
- Physical Review Letters
Photoemission energy distributions for Au from 10 to 40 eV using synchrotron radiation
- D.E. Eastman
- W.D. Grobman
- 1972
- Physical Review Letters
Temperature-modulated photoemission spectra for gold
- W.D. Grobman
- D.E. Eastman
- 1972
- Physical Review Letters