Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Publications
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159 results for F.M. D'Heurle
Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon
- M.O. Aboelfotoh
- H.M. Tawancy
- et al.
- 1987
- Applied Physics Letters
Electrical measurement of the formation of the platinum-rich metal silicides by metal-silicon reaction
- P. Gas
- J. Tardy
- et al.
- 1987
- Applied Physics Letters
Formation and oxidation mechanisms in two semiconducting silicides
- F.M d'Heurle
- 1987
- Thin Solid Films
Disilicide solid solutions, phase diagram, and resistivities. II. TaSi 2-WSi2
- P. Gas
- J. Tardy
- et al.
- 1987
- Journal of Applied Physics
A study of the oxidation of selected metal silicides
- R.D. Frampton
- E.A. Irene
- et al.
- 1987
- Journal of Applied Physics
Formation of intermediate phases, Ni3Si2 and Pt 6Si5: Nucleation, identification, and resistivity
- P. Gas
- F.M. D'Heurle
- et al.
- 1986
- Journal of Applied Physics
Transmission electron microscope study of the initial stage of formation of Pd2Si and Pt2Si
- M.O. Aboelfotoh
- A. Alessandrini
- et al.
- 1986
- Applied Physics Letters
Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- C.Y. Wong
- F.S. Lai
- et al.
- 1986
- Journal of Applied Physics
The measurement of effective complex refractive indices for selected metal silicides
- R.D. Frampton
- E.A. Irene
- et al.
- 1986
- Journal of Applied Physics