New technology for bipolar emitters in the deep sub-micron range
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1989
- VLSI Technology 1989
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28 results for S. Mader
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
Selective Epitaxial Refill for In-Trench Device Fabrication
- J.N. Burghartz
- J. Warnock
- et al.
- 1989
- Electronics Letters
Selective epitaxy base for bipolar transistors
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- ESSDERC 1988
Selective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
Electrical characteristics of diodes fabricated in selective-epitaxial silicon wells
- David Harame
- Barry Ginsberg
- et al.
- 1987
- Solid State Electronics
Transient enhanced diffusion in arsenic-implanted short time annealed silicon
- R. Kalish
- T.O. Sedgwick
- et al.
- 1984
- Applied Physics Letters
Channeling in low energy boron ion implantation
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1984
- Applied Physics Letters
The poly-single crystalline silicon interface
- C.Y. Wong
- Alwin E. Michel
- et al.
- 1984
- Journal of Applied Physics
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
- B.J. Ginsberg
- M. Arienzo
- et al.
- 1983
- ECS Meeting 1983