Determination of lattice disorder profiles in crystals by nuclear backscattering
- James F. Ziegler
- 2003
- Journal of Applied Physics
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82 results for James F. Ziegler
Technique for determining concentration profiles of boron impurities in substrates
- J.F. Ziegler
- G.W. Cole
- et al.
- 2003
- Journal of Applied Physics
Defining the "random" spectrum as used in the channeling technique of nuclear backscattering
- J.F. Ziegler
- B.L. Crowder
- 2003
- Applied Physics Letters
Discovery of anomalous base regions in transistors
- J.F. Ziegler
- G.W. Cole
- et al.
- 2003
- Applied Physics Letters
Analysis of formation of hafnium silicide on silicon
- C.J. Kircher
- J.W. Mayer
- et al.
- 2003
- Applied Physics Letters
Densities of amorphous Si films by nuclear backscattering
- M.H. Brodsky
- D. Kaplan
- et al.
- 2003
- Applied Physics Letters
Range distribution of implanted ions in SiO2, Si 3N4, and Al2O3
- W.K. Chu
- B.L. Crowder
- et al.
- 2003
- Applied Physics Letters
Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reaction
- J.F. Ziegler
- B.L. Crowder
- et al.
- 2003
- Applied Physics Letters
Energy-loss measurements of 4He ions in heavy metals
- W.K. Chu
- J.F. Ziegler
- et al.
- 2003
- Applied Physics Letters
Profiling of periodic structures (GaAsSingle Bond signGaAlAs) by nuclear backscattering
- J.W. Mayer
- J.F. Ziegler
- et al.
- 2003
- Journal of Applied Physics