Stoichiometry and atomic defects in rf-sputtered SiO2
- T.W. Hickmott
- J.E.E. Baglin
- 2008
- Journal of Applied Physics
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38 results for T.W. Hickmott
Dipole layers at the metal-SiO2 interface
- T.W. Hickmott
- 2008
- Journal of Applied Physics
The use of thermally stimulated ionic currents with a hyperbolic heating rate to measure sodium motion in rf-sputtered SiO2 films
- T.W. Hickmott
- 2003
- Applied Physics Letters
Defect centers in oxygen-deficient rf-sputtered SiO2 films. I. Electron spin resonance
- T.W. Hickmott
- 2003
- Journal of Applied Physics
Defect centers in oxygen-deficient rf-sputtered SiO2 films. II. Thermoluminescence
- T.W. Hickmott
- 2003
- Journal of Applied Physics
Incoherent mesoscopic hole tunneling through barrier states in p-type AlxGa1-xAs capacitors
- T.W. Hickmott
- 1992
- Physical Review B
Admittance measurements of magnetic freezeout in n - Type GaAs
- T.W. Hickmott
- 1992
- Physical Review B
Transverse magnetotunneling in AlxGa1-xAs capacitors. III. Tunneling into interface Landau states in n+-type GaAs
- T.W. Hickmott
- 1991
- Physical Review B
Admittance measurements of acceptor freezeout and impurity conduction in Be-doped GaAs
- T.W. Hickmott
- 1991
- Physical Review B
A temperature-independent capacitance in semiconductor-insulator- semiconductor capacitors
- T.W. Hickmott
- P. Solomon
- 1990
- Journal of Applied Physics