Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs
- Alexandre Acovic
- Devendra K. Sadana
- et al.
- 1993
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
58 results for F. Cardone
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
DX centers in Sn-doped AlxGa1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- P.M. Mooney
- B.D. Parker
- et al.
- 1992
- Applied Physics Letters
Oxidation induced AlAs/GaAs superlattice disordering
- J.C.P. Chang
- K.L. Kavanagh
- et al.
- 1992
- Applied Physics Letters
Thermal stability of Si1-xCx/Si strained layer superlattices
- M.S. Goorsky
- Subramanian S. Iyer
- et al.
- 1992
- Applied Physics Letters
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- M.A. Tischler
- P.M. Mooney
- et al.
- 1992
- Journal of Applied Physics
Arsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Synthesis of Si1-yCy alloys by molecular beam epitaxy
- Subramanian S. Iyer
- K. Eberl
- et al.
- 1992
- Applied Physics Letters
Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Crystal Growth