Amorphous (Mo, Ta, or W)-Si-N diffusion barriers for Al metallizations
- J.S. Reid
- E. Kolawa
- et al.
- 1996
- Journal of Applied Physics
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58 results for F. Cardone
Thermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistors
- E.S. Harmon
- M.R. Melloch
- et al.
- 1994
- Applied Physics Letters
Film stress of sputtered W/C multilayers and strain relaxation upon annealing
- J.F. Geisz
- T.F. Kuech
- et al.
- 1994
- Journal of Applied Physics
Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1-xAs growth
- J.W. Huang
- D.F. Gaines
- et al.
- 1994
- Journal of Electronic Materials
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration
- L. Clevenger
- N.A. Bojarczuk
- et al.
- 1993
- Journal of Applied Physics
Thermal stability of Si1-xCx/Si strained layer superlattices
- M.S. Goorsky
- Subramanian S. Iyer
- et al.
- 1992
- Applied Physics Letters
Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Arsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
DX centers in Sn-doped AlxGa1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- P.M. Mooney
- B.D. Parker
- et al.
- 1992
- Applied Physics Letters