Summary Abstract’ Integrated system for studies of thln-film chemical growth processes on silicon wafers
- M. Liehr
- S. Gates
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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72 results for G.W. Rubloff
Kinetics of high-temperature thermal decomposition of Si0 2 on Si(100)
- M. Liehr
- J.E. Lewis
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Journal of Applied Physics
Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphere
- K. Hofmann
- D.R. Young
- et al.
- 1987
- Journal of Applied Physics
High temperature reaction and defect chemistry at the Si/SiO2 interface
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Applied Surface Science
Defect formation in thermal SiO2 by high-temperature annealing
- K. Hofmann
- G.W. Rubloff
- et al.
- 1986
- Applied Physics Letters
Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interface
- M. Liehr
- H. Lefakis
- et al.
- 1986
- Physical Review B
Low temperature material reaction at the Ti/Si(111) interface
- R.M. Tromp
- G.W. Rubloff
- et al.
- 1986
- JVSTA
Summary Abstract: High temperature decomposition of SiO2at the Si/SiO2 interface
- G.W. Rubloff
- R.M. Tromp
- et al.
- 1986
- JVSTA
Material reaction and silicide formation at the refractory metal/silicon interface
- G.W. Rubloff
- R.M. Tromp
- et al.
- 1986
- Applied Physics Letters