High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
Publications
139 results at IEEE Transactions on Electron Devices
Fabrication and analysis of deep submicron strained-Si N-MOSFET's
- Kern Rim
- Judy L. Hoyt
- et al.
- 2000
- IEEE Transactions on Electron Devices
RF potential of a 0.18-μm CMOS logic device technology
- Joachim N. Burghartz
- Michael Hargrove
- et al.
- 2000
- IEEE Transactions on Electron Devices
MOSFET channel length: extraction and interpretation
- Y. Taur
- 2000
- IEEE Transactions on Electron Devices
Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
- Steven E. Laux
- Karl Hess
- 1999
- IEEE Transactions on Electron Devices
The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's
- Thomas G. Ference
- Jay S. Burnham
- et al.
- 1999
- IEEE Transactions on Electron Devices
Electric-field penetration into metals: consequences for high-dielectric-constant capacitors
- Charles T. Black
- Jeffrey J. Welser
- 1999
- IEEE Transactions on Electron Devices
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl μ/m CMOS technology
- H. Wong
- R. Chang
- et al.
- 1998
- IEEE Transactions on Electron Devices
A front-gate charge-pumping method for probing both interfaces in SOI devices
- Yujun Li
- T.P. Ma
- 1998
- IEEE Transactions on Electron Devices
Monitoring hot-carrier degradation in SOI MOSFET's by hot-carrier luminescence techniques
- Luca Selmi
- Maura Pavesi
- et al.
- 1998
- IEEE Transactions on Electron Devices