Unoccupied surface state and conduction band critical points of GaP(110): A high resolution inverse photoemission studyD. StraubM. Skibowskiet al.1985JVSTA
Summary Abstract: Low temperature adsorption and reaction of O2 with Si(111) 7×7A.J. Schell-SorokinJ.E. Demuth1985JVSTA
Highly selective argon-oxygen ion beam etching process for Pb alloysD.F. MooreH.P. Dietrichet al.1985JVSTA
Summary Abstract: Energy distributions of electronically excited molecules produced by ion bombardment of siliconR.E. WalkupPh. Avouris1985JVSTA
Summary Abstract: Modification of metals by low energy ions during thin film depositionJ.M.E. HaroerJ.J. Cuomo1985JVSTA
Summary Abstract: Titanium silicide films prepared by reactive sputteringV. DelineF.M. d’Heurle1985JVSTA