Reduced gate-leakage current and charge trapping characteristics of dysprosium-incorporated HfO2 gate-oxide n-MOS devices
- Tackhwi Lee
- Sanjay K. Banerjee
- 2011
- IEEE T-ED
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On the high-field transport and uniaxial stress effect in Ge PFETs
- Masaharu Kobayashi
- Jérǒme Mitard
- et al.
- 2011
- IEEE T-ED
Transistor mismatch properties in deep-submicrometer CMOS technologies
- Xiaobin Yuan
- Takashi Shimizu
- et al.
- 2011
- IEEE T-ED
On the possibility of obtaining MOSFET-like performance and Sub-60-mV/dec swing in 1-D broken-gap tunnel transistors
- Siyuranga O. Koswatta
- Steven J. Koester
- et al.
- 2010
- IEEE T-ED
Comparative study of FinFET versus quasi-planar HTI MOSFET for ultimate scalability
- Reinaldo A. Vega
- Tsu-Jae King Liu
- 2010
- IEEE T-ED
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2010
- IEEE T-ED
Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
- Rajan K. Pandey
- Kota V. R. M. Murali
- et al.
- 2010
- IEEE T-ED
Effects of substrate orientation and channel stress on short-channel thin SOI MOSFETs
- Amlan Majumdar
- Christine Ouyang
- et al.
- 2010
- IEEE T-ED
Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks
- Gennadi Bersuker
- Chang Seo Park
- et al.
- 2010
- IEEE T-ED
Stress liner effects for 32-nm SOI MOSFETs with HKMG
- Ming Cai
- Karthik Ramani
- et al.
- 2010
- IEEE T-ED