The high-mobility bended n-channel silicon nanowire transistor
- Kirsten Emilie Moselund
- Mohammad Najmzadeh
- et al.
- 2010
- IEEE T-ED
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Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors
- Junghyo Nah
- En-Shao Liu
- et al.
- 2010
- IEEE T-ED
Toward nanowire electronics
- Joerg Appenzeller
- Joachim Knoch
- et al.
- 2008
- IEEE T-ED
On the Perimeter Base Leakage of Double-Poly Self-Aligned p-n-p Transistors
- Pong-Fei Lu
- James D. Warnock
- 1992
- IEEE T-ED
IIIB-8 High-Density Optical Storage Using Arsenic Nanoclusters in GaAs and AlGaAs
- M.R. Melloch
- D.D. Nolte
- et al.
- 1992
- IEEE T-ED
Ion implantation in gallium arsenide mesfet technology
- Devendra K. Sadana
- 1992
- IEEE T-ED
Flux Considerations in the Coupling of Monte Carlo Plasma Sheath Simulations with Feature Evolution Models
- Manoj Dalvie
- Rida T. Farouki
- et al.
- 1992
- IEEE T-ED
Nanostructure Resonances
- Peter J. Price
- 1992
- IEEE T-ED
IIA-3 p+ Polysilicon Emitters for Sub-0.5 µm High-Performance p-n-p
- J. Warnock
- J.Y.-C. Sun
- et al.
- 1992
- IEEE T-ED
IIA-4 Low-Temperature Operation of SiGe p-n-p HBT's
- E.F. Crabbé
- D.L. Harame
- et al.
- 1992
- IEEE T-ED