IVA-5 GaAs Sees THE Light
- M.R. Melloch
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
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Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
Frequency Response of Advanced Silicon Bipolar Transistors at Low Temperature
- Keith A. Jenkins
- 1990
- IEEE T-ED
Low-Temperature Avalanche Multiplication In The Collector-Base Junction Of Advanced N-P-N Transistors
- Pong-Fei Lu
- 1990
- IEEE T-ED
On the Very-High-Current Degradations on Si n-p-n Transistors
- Denny Duan-Lee Tang
- Edward Hackbarth
- et al.
- 1990
- IEEE T-ED
Avalanche Electron Injection in 4-nm Si3N4/8-nm SiO2 Dielectric Structure: Turn-Around Phenomenon and Si-SiO2 Interface Degradation
- Leonello Dori
- Maurizio Severi
- et al.
- 1990
- IEEE T-ED
Scaling The Silicon Bipolar Transistor For Sub-100-Ps Ecl Circuit Operation At Liquid Nitrogen Temperature
- John D. Cressler
- Tze-Chiang Chen
- et al.
- 1990
- IEEE T-ED
One-Dimensional All Injection Nonquasi-static Models for Arbitrarily Doped Quasi-neutral Layers in Bipolar Junction Transistors Including Plasma-Induced Energy-Gap Narrowing
- Ben S. Wu
- Fredrik A. Lindholm
- 1990
- IEEE T-ED
An Extension of the Reciprocity Theorem to Include High-Level Injection Conditions
- G. Krieger
- Y. Kwark
- et al.
- 1990
- IEEE T-ED
Reply To “Comments On 'Unilateral Gain Of Heterojunction Bipolar Transistors At Microwave Frequencies'”
- Sheila Prasad
- Wai Lee
- et al.
- 1990
- IEEE T-ED