IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET’S

Paper

01 Jan 1991

IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

No abstract available.

Conference paper

T.N. Jackson, G. Pepper, et al.

IEDM 1990

Paper

R.F. Boehme, G.S. Cargill III, et al.

Journal of Applied Physics

Paper

T.I. Chappell, C.M. Ransom

Review of Scientific Instruments

Paper

P.D. Kirchner, T.N. Jackson, et al.

Applied Physics Letters