Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
- I.A. Shareef
- G.W. Rubloff
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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168 results at Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Hot electron transport through metal-oxide-semiconductor structure studied by ballistic electron emission spectroscopy
- R. Ludeke
- A. Bauer
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Simulations of trench-filling profiles under ionized magnetron sputter metal deposition
- S. Hamaguchi
- S.M. Rossnagel
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Filling dual damascene interconnect structures with AlCu and Cu using ionized magnetron deposition
- S.M. Rossnagel
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure
- G. Northrop
- J.F. Morar
- et al.
- 1992
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Photoluminescence from epitaxial Si/Si0.95Ge0.05 heterostructures as probed by optically active deep levels
- G. Northrop
- D.J. Wolford
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Intrinsic recombination and interface characterization in "surface-free" GaAs structures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures