Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyondSarunya BangsaruntipK. Balakrishnanet al.2013IEDM 2013
A time-dependent clustering model for non-uniform dielectric breakdownErnest Y. WuB. Liet al.2013IEDM 2013
200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA moleculesC. WangS.W. Namet al.2013IEDM 2013
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyondQ. LiuM. Vinetet al.2013IEDM 2013