Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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306 results at IEEE Electron Device Letters

Anomalous Narrow Channel Effect in Trench-Isolated Buried-Channel P-MOSFET‘s
- - J.A. Mandelman
  - J. Alsmeier
- 1994
- IEEE Electron Device Letters
Experimental High Performance Sub-0.1 μm Channel nMOSFET's
- - Y. Mii
  - S. Rishton
  - et al.
- 1994
- IEEE Electron Device Letters
Reliability Imposed Design Aspects of Submicrometer Polysilicon-Emitter Bipolar Transistors
- - Joachim N. Burghartz
  - Yuh-Jier Mii
- 1993
- IEEE Electron Device Letters
A Model for Anomalous Short-Channel Behavior in Submicron MOSFET’s
- - H.I. Hanafi
  - Y. Lii
  - et al.
- 1993
- IEEE Electron Device Letters
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- - Emmanuel F. Crabbé
  - John D. Cressler
  - et al.
- 1993
- IEEE Electron Device Letters
Gate current injection in MOSFET's with a split-gate (virtual drain) structure
- - H.-S. Wong
- 1993
- IEEE Electron Device Letters
High-Performance Si/SiGe n-Type Modulation-Doped Transistors
- - Khaled Ismail
  - S. Rishton
  - et al.
- 1993
- IEEE Electron Device Letters
Anomalous Voltage Overshoot During Turn-Off of Thin-Film n-Channel SOI MOSFET's
- - E. Dubois
  - Ghavam G. Shahidi
  - et al.
- 1993
- IEEE Electron Device Letters
High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- - Emmanuel F. Crabbé
  - James H. Comfort
  - et al.
- 1993
- IEEE Electron Device Letters
Extension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- - Enrico Zanoni
  - Emmanuel F. Crabbé
  - et al.
- 1993
- IEEE Electron Device Letters