MONOLITHIC INTEGRATION OF A 3-GHZ DETECTOR/PREAMPLIFIER USING A REFRACTORY-GATE, ION-IMPLANTED MESFET PROCESS.
- D.L. Rogers
- 1986
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Heavily Doped Polysilicon-Contact Solar Cells
- F.A. Lindholm
- A. Neugroschel
- et al.
- 1985
- IEEE Electron Device Letters
Geometry Effects in MOSFET Channel Length Extraction Algorithms
- M.R. Wordeman
- J.Y.-C. Sun
- et al.
- 1985
- IEEE Electron Device Letters
An In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMT
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE Electron Device Letters
Effects of Channel Geometries on FET Output Conductance in Saturation
- Bruno Riccò
- 1984
- IEEE Electron Device Letters
A Low-Power Programming Technique for Polysilicon Fuses
- C.Y. Lu
- C.Y. Lu
- et al.
- 1984
- IEEE Electron Device Letters
A GaAs Gate Heterojunction FET
- P. Solomon
- C.M. Knoedler
- et al.
- 1984
- IEEE Electron Device Letters
p-Channel MODFET's Using GaAlAs/GaAs Two-Dimensional Hole Gas
- S. Tiwari
- W.I. Wang
- 1984
- IEEE Electron Device Letters
Characterization of Non-Ohmic Behavior of Emitter Contacts of Bipolar Transistors
- B. Ricco
- J.M.C. Stork
- et al.
- 1984
- IEEE Electron Device Letters
Spreading Resistance in Submicron MOSFET's
- G. Baccarani
- G.A. Sai-Halasz
- 1983
- IEEE Electron Device Letters