Self-Aligned Bipolar Transistors for High-Performance and Low-Power-Delay VLSITak H. NingRandall D. Isaacet al.1981IEEE T-ED
Importance of Boundary Conditions to Conduction in Short SamplesJames J. RosenbergEllen J. Yoffaet al.1981IEEE T-ED
IVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During AnnealingJ. WoodallH. Rupprechtet al.1981IEEE T-ED
The Effect of Base Doping on the Performance of Si Bipolar Transistors at Low TemperaturesWilliam P. Dumke1981IEEE T-ED
The Effect of Concrete Shielding on Cosmic Ray Induced Soft Fails in Electronic SystemsJames F. Ziegler1981IEEE T-ED
The Pressure Dependence of the Bistable Voltage Margin of an AC Plasma Panel CellOmesh SahniM.O. Aboelefotoh1981IEEE T-ED
Dependence of Electroluminescence Efficiency and Memory Effect on Mn Concentration in ZnS: Mn ACTEL DevicesV. MarrelloAare Onton1980IEEE T-ED