Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs - Part-II: AC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
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Nanoscale Accumulated Body Si nMOSFETs
- Mustafa B. Akbulut
- Faruk Dirisaglik
- et al.
- 2018
- IEEE T-ED
3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes
- Anil K. Bansal
- Charu Gupta
- et al.
- 2018
- IEEE T-ED
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditions
- Narendra Parihar
- Uma Sharma
- et al.
- 2018
- IEEE T-ED
Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration
- Carlos Navarro
- Meng Duan
- et al.
- 2017
- IEEE T-ED
Analytical Modeling of Parasitic Capacitance in Inserted-Oxide FinFETs
- R. Singh
- Anshul Gupta
- et al.
- 2017
- IEEE T-ED
Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS with Interlayer Contacts
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- IEEE T-ED
Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM
- Carlos Navarro
- Joris Lacord
- et al.
- 2017
- IEEE T-ED
First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
- H. Dixit
- Chengyu Niu
- et al.
- 2017
- IEEE T-ED
High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts
- Jianshi Tang
- Qing Cao
- et al.
- 2017
- IEEE T-ED