Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
- Jonathan A. Pellish
- Robert A. Reed
- et al.
- 2009
- IEEE TNS
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Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM
- David F. Heidel
- Paul W. Marshall
- et al.
- 2009
- IEEE TNS
Low energy proton single-event-upset test results on 65 nm SOI SRAM
- David F. Heidel
- Paul W. Marshall
- et al.
- 2008
- IEEE TNS
Design implications of single event transients in a commercial 45 nm SOI device technology
- Aj Kleinosowski
- Ethan H. Cannon
- et al.
- 2008
- IEEE TNS
Alpha-particle, carbon-ion and proton- induced flip-flop single-event-upsets in 65 nm bulk technology
- Larry Wissel
- Ethan H. Cannon
- et al.
- 2008
- IEEE TNS
The radiation tolerance of strained Si/SiGe n-MODFETs
- Anuj Madan
- Bongim Jun
- et al.
- 2007
- IEEE TNS
Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells
- Kenneth P. Rodbell
- David F. Heidel
- et al.
- 2007
- IEEE TNS
Importance of BEOL modeling in single event effect analysis
- Henry H. K. Tang
- Conal E. Murray
- et al.
- 2007
- IEEE TNS
Latch design techniques for mitigating single event upsets in 65 nm SOI device technology
- A.J. KleinOsowski
- Ethan H. Cannon
- et al.
- 2007
- IEEE TNS
X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
- Marco Bellini
- Bongim Jun
- et al.
- 2006
- IEEE TNS