Low energy proton single-event-upset test results on 65 nm SOI SRAM
- David F. Heidel
- Paul W. Marshall
- et al.
- 2008
- IEEE TNS
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64 results at IEEE TNS
Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells
- Kenneth P. Rodbell
- David F. Heidel
- et al.
- 2007
- IEEE TNS
Latch design techniques for mitigating single event upsets in 65 nm SOI device technology
- A.J. KleinOsowski
- Ethan H. Cannon
- et al.
- 2007
- IEEE TNS
The radiation tolerance of strained Si/SiGe n-MODFETs
- Anuj Madan
- Bongim Jun
- et al.
- 2007
- IEEE TNS
Importance of BEOL modeling in single event effect analysis
- Henry H. K. Tang
- Conal E. Murray
- et al.
- 2007
- IEEE TNS
Modeling single-event upsets in 65-nm silicon-on-insulator semiconductor devices
- A.J. KleinOsowski
- Phil Oldiges
- et al.
- 2006
- IEEE TNS
X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
- Marco Bellini
- Bongim Jun
- et al.
- 2006
- IEEE TNS
Single-event-upset critical charge measurements and modeling of 65 nm silicon-on-insulator latches and memory cells
- David F. Heidel
- Kenneth P. Rodbell
- et al.
- 2006
- IEEE TNS
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI
- Tianbing Chen
- Akil K. Sutton
- et al.
- 2005
- IEEE TNS
Bias-temperature instabilities and radiation effects in MOS devices
- X.J. Zhou
- D.M. Fleetwood
- et al.
- 2005
- IEEE TNS