Conference paper
SOI FinFET soft error upset susceptibility and analysis
Phil Oldiges, Ken Rodbell, et al.
IRPS 2015
Experimental and modeling results are presented on the critical charge required to upset exploratory 65 nm silicon-on-insulator (SOI) circuits. Using a mono-energetic, collimated, beam of particles the charge deposition was effectively modulated and modeled. © 2006 IEEE.
Phil Oldiges, Ken Rodbell, et al.
IRPS 2015
Jonathan A. Pellish, Paul W. Marshall, et al.
IEEE TNS
Mihail P. Petkov, Marc H. Weber, et al.
Applied Physics Letters
Kenneth P. Rodbell, David F. Heidel, et al.
IEEE TNS