The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconBilly L. Crowder1971JES
Effect of Partial Dissolution During LPE Growth of AlxGa1-xAs on the Efficiency of Diffused Light-Emitting DiodesK.K. ShihJ.M. Blum1971JES
The Effect of Growth Orientation on the Crystal Perfection of Horizontal Bridgman Grown GaAsT.S. PlaskettJ. Woodallet al.1971JES
The In-Ga-P Ternary Phase Diagram and Its Application to Liquid Phase Epitaxial GrowthG.M. Blom1971JES
Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS StructuresN.J. Chou1971JES