Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
The crystalline perfection of Sn-doped GaAs crystals grown by the horizontal Bridgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded doped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. © 1971, by The Electrochemical Society, Inc. All rights reserved.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993