Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
The Effect of Growth Orientation on the Crystal Perfection of Horizontal Bridgman Grown GaAs
Abstract
The crystalline perfection of Sn-doped GaAs crystals grown by the horizontal Bridgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded doped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. © 1971, by The Electrochemical Society, Inc. All rights reserved.
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