Isothermal Solution Mixing Growth of Thin Ga1-xAlxAs Layers
- J. Woodall
- 1971
- JES
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Solidus Boundary in the InAs-AIAs Pseudobinary System
- L.M. Foster
- J.E. Scardefield
- 1971
- JES
The Solidus Boundary in the GaP-InP Pseudobinary System
- L.M. Foster
- J.E. Scardefield
- 1970
- JES
Anomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers
- M. Berkenblit
- T.B. Light
- et al.
- 1970
- JES
Effects of Material and Processing Parameters on the Dielectric Strength of Thermally Grown Si02 Films
- N.J. Chou
- J.M. Eldridge
- 1970
- JES
The Role of Damage in the Annealing Characteristics of Ion Implanted Si
- Billy L. Crowder
- 1970
- JES
The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls
- L.H. Kaplan
- F.M. d'Heurle
- 1970
- JES
High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
- Billy L. Crowder
- John M. Fairfield
- 1970
- JES
Epitaxial Growth of GaAsxP1-x from the Liquid Phase
- K.K. Shih
- 1970
- JES
Negative Surface Charge in Ge MOS Structures
- T.O. Sedgwick
- S. Krongelb
- 1970
- JES