Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

Date

Start

End

Featured collections

Popular topics

306 results at IEEE Electron Device Letters

High hole-mobility strained-Ge/Si _0.6Ge _0.4 P-MOSFETs with high-κ/metal gate: Role of strained-Si cap thickness
- - Pouya Hashemi
  - Judy L. Hoyt
- 2012
- IEEE Electron Device Letters
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2012
- IEEE Electron Device Letters
Double contacts for improved performance of graphene transistors
- - Aaron D. Franklin
  - Shu-Jen Han
  - et al.
- 2012
- IEEE Electron Device Letters
Enhanced performance in epitaxial graphene FETs with optimized channel morphology
- - Yu-Ming Lin
  - Damon B. Farmer
  - et al.
- 2011
- IEEE Electron Device Letters
Characterization of Cu reflows on Ru
- - C.-C. Yang
  - P. Flaitz
  - et al.
- 2011
- IEEE Electron Device Letters
Effects of nanoscale contacts to graphene
- - Aaron D. Franklin
  - Shu-Jen Han
  - et al.
- 2011
- IEEE Electron Device Letters
On the electron and hole tunneling in a HfO₂ gate stack with extreme interfacial-layer scaling
- - Takashi Ando
  - Ninad D. Sathaye
  - et al.
- 2011
- IEEE Electron Device Letters
Microthermal stage for electrothermal characterization of phase-change memory
- - Jaeho Lee
  - Sangbum Kim
  - et al.
- 2011
- IEEE Electron Device Letters
Aggressively scaled strained-silicon-on-insulator undoped-body High-κ/Metal-Gate nFinFETs for high-performance logic applications
- - Kingsuk Maitra
  - Ali Khakifirooz
  - et al.
- 2011
- IEEE Electron Device Letters
Channel-length-dependent transport behaviors of graphene field-effect transistors
- - Shu-Jen Han
  - Zhihong Chen
  - et al.
- 2011
- IEEE Electron Device Letters