On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages
- Shu-Jen Han
- Xinlin Wang
- et al.
- 2008
- IEDM 2008
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15 results at IEDM 2008
Experimental and theoretical analysis of factors causing asymmetrical temperature dependence of vt in High-k Metal gate CMOS with capped High-k techniques
- Ryosuke Iijima
- Mariko Takayanagi
- 2008
- IEDM 2008
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices
- Zhihong Chen
- Joerg Appenzeller
- 2008
- IEDM 2008
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
MOSFET performance scaling: Limitations and future options
- Dimitri A. Antoniadis
- Ali Khakifirooz
- 2008
- IEDM 2008
Analytical model for RESET operation of phase change memory
- B. Rajendran
- J. Karidis
- et al.
- 2008
- IEDM 2008