Improved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlationXiaojun YuShu-Jen Hanet al.2008IEDM 2008
Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devicesZhihong ChenJoerg Appenzeller2008IEDM 2008
Experimental and theoretical analysis of factors causing asymmetrical temperature dependence of vt in High-k Metal gate CMOS with capped High-k techniquesRyosuke IijimaMariko Takayanagi2008IEDM 2008
32nm general purpose bulk CMOS technology for high performance applications at low voltageF. ArnaudJ. Liuet al.2008IEDM 2008
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memoryY.H. ShihJ.Y. Wuet al.2008IEDM 2008
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)R. BeachT. Minet al.2008IEDM 2008
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cellB. HaranA. Kumaret al.2008IEDM 2008
MOSFET performance scaling: Limitations and future optionsDimitri A. AntoniadisAli Khakifirooz2008IEDM 2008
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bondingF. LiuR.R. Yuet al.2008IEDM 2008