Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
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17 results at IEDM 2002
A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- K.W. Guarini
- A. Topol
- et al.
- 2002
- IEDM 2002
Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
Carbon nanotube electronics
- Phaedon Avouris
- Joerg Appenzeller
- et al.
- 2002
- IEDM 2002
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
- K. Rim
- S. Narasimha
- et al.
- 2002
- IEDM 2002
Noise performance of a low base resistance 200 GHz SiGe technology
- D.R. Greenberg
- B. Jagannathan
- et al.
- 2002
- IEDM 2002
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002