Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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17 results at IEDM 2002

Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- - B.H. Lee
  - A.C. Mocuta
  - et al.
- 2002
- IEDM 2002
A high performance 90 nm SOI technology with 0.992 μm² 6T-SRAM cell
- - Mukesh Khare
  - S. Ku
  - et al.
- 2002
- IEDM 2002
Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- - K.W. Guarini
  - A. Topol
  - et al.
- 2002
- IEDM 2002
Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS device
- - K.L. Lee
  - J.O. Chu
  - et al.
- 2002
- IEDM 2002
Carbon nanotube electronics
- - Phaedon Avouris
  - Joerg Appenzeller
  - et al.
- 2002
- IEDM 2002
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
- - K. Rim
  - S. Narasimha
  - et al.
- 2002
- IEDM 2002
Noise performance of a low base resistance 200 GHz SiGe technology
- - D.R. Greenberg
  - B. Jagannathan
  - et al.
- 2002
- IEDM 2002
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- - Jakub Kedzierski
  - Edward Nowak
  - et al.
- 2002
- IEDM 2002
Extreme scaling with ultra-thin Si channel MOSFETs
- - Bruce Doris
  - Meikei Ieong
  - et al.
- 2002
- IEDM 2002
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- - Huiling Shang
  - Harald Okorn-Schmidt
  - et al.
- 2002
- IEDM 2002