Gate-current injection and surface impact ionization in MOSFET's with a gate induced virtual drain
- Hon-Sum Wong
- 1992
- IEDM 1992
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12 results at IEDM 1992
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- E. Zanoni
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Mixed Schottky/p-n junction behavior in diodes produced by outdiffusion from polycrystalline cobalt disilicide
- D.P. Foty
- H.I. Hanafi
- et al.
- 1992
- IEDM 1992
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
High transconductance 0.1 μ m pMOSFET
- Y. Taur
- S. Cohen
- et al.
- 1992
- IEDM 1992
AC characterization and modelling of the GexSi1-x/Si BICFET
- M.E. Mierzwinski
- J.D. Plummer
- et al.
- 1992
- IEDM 1992
Monte carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1992
- IEDM 1992
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
- D.J. Frank
- S.E. Laux
- et al.
- 1992
- IEDM 1992
Steady state and pulsed bias stress induced degradation in amorphous silicon thin film transistors for active-matrix liquid crystal displays
- Frank R. Libsch
- 1992
- IEDM 1992