A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
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11 results at IEDM 1989
Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs
- M.V. Fischetti
- S.E. Laux
- 1989
- IEDM 1989
Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE
- P. Solomon
- A. Palevski
- et al.
- 1989
- IEDM 1989
A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
- C.C.-H. Hsu
- D.S. Wen
- et al.
- 1989
- IEDM 1989
A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)
- B. Davari
- C. Koburger
- et al.
- 1989
- IEDM 1989
A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits
- C.T. Chuang
- P.F. Lu
- 1989
- IEDM 1989
Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors
- Wai Lee
- S.E. Laux
- et al.
- 1989
- IEDM 1989