Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2016
- IEDM 2016
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16 results at IEDM 2016
High-Q magnetic inductors for high efficiency on-chip power conversion
- Naigang Wang
- Bruce Doris
- et al.
- 2016
- IEDM 2016
Local thermometry of self-heated nanoscale devices
- F. Menges
- Fabian Motzfeld
- et al.
- 2016
- IEDM 2016
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
- Takashi Ando
- Eduard Cartier
- et al.
- 2016
- IEDM 2016
ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
Contact resistivities in gamma-valley materials
- Paul Solomon
- 2016
- IEDM 2016
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- W. Chien
- Huai-Yu Cheng
- et al.
- 2016
- IEDM 2016
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- Oleg Gluschenkov
- Zuoguang Liu
- et al.
- 2016
- IEDM 2016
Vertical channel devices enabled by through silicon via (TSV) technologies
- C. Kothandaraman
- Sami Rosenblatt
- et al.
- 2016
- IEDM 2016